FQD8P10TF Fairchild Semiconductor, FQD8P10TF Datasheet - Page 7

• Manufacturer Part Number: FQD8P10TF
• Description: MOSFET P-CH 100V 6.6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD8P10TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
D - PAK
Dimensions in Millimeters
m
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002