IRLI510ATU Fairchild Semiconductor, IRLI510ATU Datasheet - Page 4

• Manufacturer Part Number: IRLI510ATU
• Description: MOSFET N-CH 100V 5.6A I2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRLI510ATU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 440 mOhm @ 2.8A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 235pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLW/I510A
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
- 5 0
1 . T
2 . T
3 . S i n g l e P u l s e
C
J
Fig 9. Max. Safe Operating Area
- 2 5
= 2 5
= 1 7 5
T
V
o
J
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
DS
C
o
C
, Junction Temperature [
0
, Drain-Source Voltage [V]
10
10
- 1
2 5
0
10
- 5
1 0
D=0.5
0.01
0.2
0.1
0.05
0.02
5 0
1
DS(on)
D C
7 5
1 0 m s
single pulse
10
t
1 0 0
1
- 4
1 m s
, Square Wave Pulse Duration
@ N o t e s :
1 2 5
1 . V
2 . I
o
C]
1 0 0 s
GS
D
1 5 0
= 2 5 0 A
= 0 V
1 0
Fig 11. Thermal Response
10
2
1 7 5
- 3
2 0 0
10
- 2
@ Notes :
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
Fig 10. Max. Drain Current vs. Case Temperature
1. Z
2. Duty Factor, D=t
3. T
6
5
4
3
2
1
0
- 7 5
2 5
P
DM
J M
J C
- 5 0
10
-T
Fig 8. On-Resistance vs. Temperature
(t)=4.1
- 1
C
=P
5 0
- 2 5
t
D M
1
t
T
*Z
2
J
[sec]
T
o
, Junction Temperature [
0
c
C/W Max.
J C
, Case Temperature [
7 5
(t)
10
1
2 5
0
/t
2
5 0
1 0 0
7 5
10
1
1 0 0
1 2 5
@ N o t e s :
o
1 2 5
C]
1 . V
2 . I
o
C]
GS
D
1 5 0
= 2 . 8 A
1 5 0
= 5 V
1 7 5
4
2 0 0
1 7 5