IRLR230ATF Fairchild Semiconductor, IRLR230ATF Datasheet - Page 4

• Manufacturer Part Number: IRLR230ATF
• Description: MOSFET N-CH 200V 7.5A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRLR230ATF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.75A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLR/U230A
1 0
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
-2
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
- 5 0
@ N o t e s :
1 . T
2 . T
3 . S i n g l e P u l s e
Fig 9. Max. Safe Operating Area
- 2 5
C
J
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
= 2 5
= 1 5 0
T
V
J
DS
, Junction Temperature [
o
, Drain-Source Voltage [V]
C
o
0
10
10
C
10
- 1
- 2
1 0
0
10
1
2 5
- 5
0.02
DS(on)
0.01
D=0.5
0.2
0.1
0.05
5 0
D C
1 0 m s
7 5
10
t
1 m s
1
- 4
single pulse
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
1 0 0 s
1 0
1 . V
2 . I
o
2
C]
1 2 5
GS
D
= 2 5 0 A
= 0 V
Fig 11. Thermal Response
10
1 5 0
- 3
1 7 5
10
- 2
@ Notes :
1. Z
2. Duty Factor, D=t
3. T
P
Fig 10. Max. Drain Current vs. Case Temperature
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
DM
8
6
4
2
0
- 7 5
2 5
J M
J C
-T
10
(t)=1.0
Fig 8. On-Resistance vs. Temperature
C
- 5 0
- 1
=P
t
1
D M
t
2
*Z
- 2 5
5 0
o
T
[sec]
J
C/W Max.
J C
T
, Junction Temperature [
c
(t)
0
1
, Case Temperature [
10
/t
0
2
2 5
7 5
5 0
10
1 0 0
7 5
1
1 0 0
@ N o t e s :
o
C]
1 . V
2 . I
o
C]
GS
D
1 2 5
1 2 5
= 4 . 5 A
= 5 V
1 5 0
1 7 5
1 5 0