FQB630TM Fairchild Semiconductor, FQB630TM Datasheet - Page 8

• Manufacturer Part Number: FQB630TM
• Description: MOSFET N-CH 200V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB630TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

      
    
1.27
2.54 TYP
0.10
10.00
9.90
0.20
0.20
2.54 TYP
1.47
0.80
0.10
0.10




0.50
+0.10
–0.05
4.50
0.20
2.40
1.30
+0.10
–0.05
0.20