HUF76609D3S Fairchild Semiconductor, HUF76609D3S Datasheet - Page 16

• Manufacturer Part Number: HUF76609D3S
• Description: MOSFET N-CH 100V 10A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76609D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 425pF @ 25V
• Power - Max: 49W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

same safeguards for sole source products as multi-source products.
We thank you for your attention in this matter. Should you have any questions,
please do not hesitate to contact your Fairchild Semiconductor salesperson.
Sincerely,
Fairchild Semiconductor
c.c.: Celsa Gonzalez
Tom Hudson
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