FQD5N50CTF Fairchild Semiconductor, FQD5N50CTF Datasheet - Page 4

• Manufacturer Part Number: FQD5N50CTF
• Description: MOSFET N-CH 500V 4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5N50CTF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Internationa
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
Operation in This Area
is Limited by R
T
V
vs Temperature
J
10
DS
, Junction Temperature [
1 0
1 0
1 0
0
DS(on)
1
, Drain-Source Voltage [V]
※ Notes :
- 1
- 2
1. T
2. T
3. Single Pulse
0
1 0
C
J
- 5
= 150
= 25
100 ms
0 . 0 5
0 . 0 1
D = 0 .5
0 . 0 2
0 . 1
0 . 2
o
DC
C
o
C
50
10 ms
Figure 11. Transient Thermal Response Curve
s in g le p u ls e
1 ms
10
1 0
(Continued)
2
100
- 4
o
100 s
C]
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
D
G S
= 250 μ A
10 s
150
= 0 V
1 0
- 3
10
3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
5
4
3
2
1
0
25
1 0
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
P
Figure 10. Maximum Drain Current
DM
θ J C
J M
-50
- T
( t) = 2 .6 ℃ /W M a x .
50
C
= P
t
1
vs Case Temperature
t
T
D M
2
1 0
vs Temperature
J
T
, Junction Temperature [
* Z
0
C
0
, Case Temperature [ ℃ ]
1
θ J C
/t
2
75
( t)
50
1 0
100
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2 A
= 10 V
Rev. A1, October 2008
150
200