FQD6N50CTF Fairchild Semiconductor, FQD6N50CTF Datasheet - Page 3

• Manufacturer Part Number: FQD6N50CTF
• Description: MOSFET N-CH 500V 4.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD6N50CTF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
10
10
800
600
400
200
-1
1
0
10
Figure 5. Capacitance Characteristics
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Figure 3. On-Resistance Variation vs
10
Figure 1. On-Region Characteristics
-1
-1
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
5
10
I
0
D
0
, Drain Current [A]
C
C
C
oss
rss
iss
V
GS
= 10V
10
C
C
C
iss
oss
rss
※
10
= C
= C
10
= C
1. 250µs Pulse Test
2. T
1
Notes :
※
1
gs
gd
ds
+ C
C
+ C
Note : T
= 25 ℃
gd
gd
V
(C
※
GS
1. V
2. f = 1 MHz
ds
J
Note ;
= 25 ℃
= shorted)
= 20V
GS
= 0 V
15
10
10
12
10
10
10
10
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
Figure 6. Gate Charge Characteristics
0
2
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
25
Variation with Source Current
o
C
150
0.4
o
C
150 ℃
4
5
and Temperature
V
V
Q
GS
SD
0.6
V
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
DS
V
DS
V
= 400V
-55
DS
25 ℃
= 250V
o
= 100V
C
0.8
6
10
1.0
※
1. V
2. 250µ s Pulse Test
Notes :
※
1. V
2. 250µ s Pulse Test
DS
Notes :
8
= 40V
※
15
GS
= 0V
Note : I
1.2
D
= 4.5A
Rev. B1, October 2008
10
1.4
20