IRLW630ATM Fairchild Semiconductor, IRLW630ATM Datasheet - Page 6

• Manufacturer Part Number: IRLW630ATM
• Description: MOSFET N-CH 200V 9A I2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of IRLW630ATM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 755pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLW/I630A
( Driver )
( DUT )
( DUT )
V
V
I
GS
S
DS
V
GS
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
R
G
DUT
Driver
I
I
FM
D =
S
, Body Diode Forward Current
--------------------------
Forward Voltage Drop
Gate Pulse Period
Gate Pulse Width
Body Diode
Same Type
as DUT
Body Diode Recovery dv/dt
V
dv/dt controlled by R
I
+
--
S
V
DS
controlled by Duty Factor D
f
Body Diode Reverse Current
I
RM
L
G
di/dt
V
V
5V
DD
DD
6