FQAF44N10 Fairchild Semiconductor, FQAF44N10 Datasheet - Page 3

• Manufacturer Part Number: FQAF44N10
• Description: MOSFET N-CH 100V 33A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF44N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
4000
3500
3000
2500
2000
1500
1000
0.15
0.12
0.09
0.06
0.03
0.00
500
10
10
10
2
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : 4.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
30
GS
V
V
DS
DS
, Drain-Source Voltage [V]
60
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
90
C
C
C
iss
oss
V
rss
GS
= 20V
V
GS
120
C
C
C
= 10V
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
= C
= C
= C
10
gs
gd
C
10
※ Note : T
ds
1
= 25 ℃
+ C
+ C
1
gd
gd
※ Notes :
150
(C
1. V
2. f = 1 MHz
ds
J
GS
= shorted)
= 25℃
= 0 V
180
10
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
2
1
0
2
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175℃
Figure 2. Transfer Characteristics
0.4
25℃
175℃
Variation vs. Source Current
10
0.6
25℃
4
V
V
GS
SD
Q
and Temperature
G
0.8
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
-55℃
20
1.0
V
6
DS
= 80V
V
1.2
DS
= 50V
30
1.4
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.6
= 40V
= 0V
40
D
= 43.5A
1.8
Rev. A2, December 2000
2.0
10
50