FQPF6N80 Fairchild Semiconductor, FQPF6N80 Datasheet - Page 7

• Manufacturer Part Number: FQPF6N80
• Description: MOSFET N-CH 800V 3.3A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF6N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.65A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 51W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Package Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
0.20
0.10
0.10
]
10.16
9.40
#1
(7.00)
0.20
0.20
[2.54
2.54TYP
TO-220F
ø3.18
0.20
]
0.10
(1.00x45 )
0.50
+0.10
–0.05
2.54
2.76
(0.70)
Rev. A, September 2000
0.20
0.20