FQP5N90 Fairchild Semiconductor, FQP5N90 Datasheet - Page 4

• Manufacturer Part Number: FQP5N90
• Description: MOSFET N-CH 900V 5.4A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP5N90

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1550pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
10
, Drain-Source Voltage [V]
0
1
1 0
1 0
※ Notes :
1 0
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
0 .0 1
o
0 .0 5
C
0 .2
o
0 .1
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
DC
10
2
100
1 0
(Continued)
10 ms
o
- 4
C]
s i n g le p u ls e
※ Notes :
1 ms
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
100 s
= 0 V
10 s
1 0
10
3
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
P
θ J C
J M
-50
DM
- T
( t) = 0 .7 9 ℃ / W M a x .
50
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
D M
t
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
1
/t
θ J C
75
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.7 A
= 10 V
Rev. A, September 2000
200
150