FQAF9N50 Fairchild Semiconductor, FQAF9N50 Datasheet - Page 208

• Manufacturer Part Number: FQAF9N50
• Description: MOSFET N-CH 500V 7.2A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF9N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1450pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Discrete IGBT (II)
SG H 20 N 120 RUF D
(Continued)
L: Logic Level
LS: Low Saturation
UF: Ultrafast
RUF: Rugged Ultrafast
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D
F: TO-3PF
L: TO-264
M: SOT-223
D, DG3: Built-in FRD
Suffix
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
Fairchild IGBT
2
-PAK
8-15
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