FQA47P06 Fairchild Semiconductor, FQA47P06 Datasheet - Page 3

• Manufacturer Part Number: FQA47P06
• Description: MOSFET P-CH 60V 55A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA47P06

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
8000
7000
6000
5000
4000
3000
2000
1000
0.10
0.08
0.06
0.04
0.02
0.00
10
10
10
2
1
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : - 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
V
GS
100
-V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
V
D
10
GS
, Drain Current [A]
C
10
C
C
0
= - 20V
rss
oss
iss
0
V
GS
= - 10V
200
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
300
※ Note : T
gs
gd
ds
1
C
+ C
+ C
= 25℃
10
gd
gd
※ Notes :
1
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
400
10
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
2
1
0
-1
2
1
0
0.0
2
0
25℃
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
175℃
0.2
Figure 2. Transfer Characteristics
175℃
10
0.4
Variation vs. Source Current
0.6
20
25℃
4
-55℃
-V
-V
0.8
Q
GS
SD
and Temperature
G
30
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
1.0
1.2
40
V
DS
1.4
6
V
= -48V
DS
50
= -30V
1.6
1.8
60
※ Notes :
2.0
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
70
2.2
GS
= -30V
= 0V
D
2.4
= -47 A
80
2.6
Rev. A2. May 2001
2.8
10
90