FQP18N50V2 Fairchild Semiconductor, FQP18N50V2 Datasheet - Page 5

• Manufacturer Part Number: FQP18N50V2
• Description: MOSFET N-CH 500V 18A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP18N50V2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF18N20V2
Figure 11-1. Transient Thermal Response Curve for FQP18N20V2
1 0
1 0
1 0
1 0
1 0
1 0
- 1
- 2
- 1
- 2
1 0
1 0
0
0
- 5
- 5
D = 0 . 5
D = 0 . 5
0 . 0 5
0 . 0 2
0 . 0 1
0 . 1
0 . 0 2
0 . 0 1
0 . 2
0 . 2
0 . 1
0 . 0 5
(Continued)
1 0
1 0
- 4
- 4
t
t
1
1
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
s i n g l e p u l s e
s i n g l e p u l s e
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※
1 0
1 0
※
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
P
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
N o t e s :
- 1
- 1
DM
N o t e s :
P
θ
J M
DM
θ
J M
J C
- T
J C
( t ) = 1 . 0 1 ℃ / W M a x .
- T
( t ) = 3 . 1 ℃ / W M a x .
C
t
C
= P
1
= P
t
t
2
1
1 0
1 0
t
D M
2
D M
0
0
* Z
* Z
1
/ t
θ
1
2
/ t
θ
J C
2
J C
( t )
( t )
1 0
1 0
1
1
Rev. B, August 2002