DMN5L06-7 Diodes Inc, DMN5L06-7 Datasheet - Page 2

• Manufacturer Part Number: DMN5L06-7
• Description: MOSFET N-CH 50V 280MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of DMN5L06-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN5L06DITR

DMN5L06
Document number: DS30614 Rev. 4 - 2
0.9
0.3
0.6
0
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
10
0
0
V
-50
GS
Fig. 5 Static Drain-Source On-Resistance
T , CHANNEL TEMPERATURE (°C)
= 10V
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
ch
DS
8V
6V
5V
4V
3V
-25
1
I , DRAIN CURRENT (A)
D
0
vs. Drain Current
2
25
50
3
75
10V
5V
4V
3V
100 125 150
4
8V
6V
5
1
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2 of 4
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
0.1
10
1
Fig. 6 Static Drain-Source On-Resistance
Fig. 2 Typical Transfer Characteristics
V
V
GS
GS,
, GATE-SOURCE VOLTAGE (V)
I DRAIN CURRENT (A)
D ,
GATE SOURCE VOLTAGE (V)
vs. Gate-Source Voltage
DMN5L06
© Diodes Incorporated
October 2007