FDPF79N15 Fairchild Semiconductor, FDPF79N15 Datasheet

MOSFET N-CH 150V 79A TO-220F

FDPF79N15

Manufacturer Part Number
FDPF79N15
Description
MOSFET N-CH 150V 79A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF79N15

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 39.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
79A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
3410pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF79N15
Manufacturer:
SI
Quantity:
5 000
©2007 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. B
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
• 79A, 150V, R
• Low gate charge ( typical 56 nC)
• Low Crss ( typical 96pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
G
D
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.03Ω @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP79N15
FDP79N15
316
463
3.7
79
50
0.27
62.5
0.5
-55 to +150
1669
± 30
46.3
150
300
4.5
79
FDPF79N15
FDPF79N15
G
316*
79*
50*
0.3
38
62.5
3.3
--
UniFET
April 2007
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF79N15 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP79N15 / FDPF79N15 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 79A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP79N15 / FDPF79N15 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C 5000 oss 4000 C iss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS FDP79N15 / FDPF79N15 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current 20V Note : T ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FDP79N15 / FDPF79N15 Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 10 μ s 100 μ ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP79N15 10 10 Figure 11-2. Transient Thermal Response Curve for FDPF79N15 FDP79N15 / FDPF79N15 Rev. B (Continued) D=0.5 -1 0.2 0.1 0.05 0.02 * Notes : - 0.01 2. Duty Factor, D single pulse - Square Wave Pulse Duration [sec] 1 D=0 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP79N15 / FDPF79N15 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 9.90 (8.70) ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP79N15 / FDPF79N15 Rev. B TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP79N15 / FDPF79N15 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP79N15 / FDPF79N15 Rev. B HiSeC™ PowerSaver™ ® i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ® IntelliMAX™ QFET ISOPLANAR™ ...

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