FDD6N50TF Fairchild Semiconductor, FDD6N50TF Datasheet - Page 2

• Manufacturer Part Number: FDD6N50TF
• Description: MOSFET N-CH 500V 6A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N50TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 16.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N50TFTR

FDD6N50/FDU6N50 REV. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
AS
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
= 6A, V
≤ 6A, di/dt ≤ 200A/µs, V
DSS
FDD6N50
FDD6N50
FDU6N50
J
DD
= 50V, L=13.5mH, R
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
≤ BV
Parameter
FDD6N50TM
FDU6N50TU
FDD6N50TF
G
DSS
Device
= 25Ω, Starting T
, Starting T
J
= 25°C
J
T
= 25°C
C
= 25°C unless otherwise noted
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 500V, V
= 400V, T
= V
= 40V, I
= 25V, V
= 400V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 250V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250µA
= 6A
= 6A
DS
GS
D
D
DS
= 3A
C
= 3A
GS
= 250µA
= 6A
= 6A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
380mm
380mm
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
16mm
16mm
Min.
500
-
3.0
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Typ.
0.76
12.8
720
275
0.5
2.5
3.7
5.8
1.7
95
55
25
35
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9
6
Quantity
Max Units
-100
13.5
16.6
www.fairchildsemi.com
100
940
190
120
5.0
0.9
1.4
10
20
60
80
24
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1
6
2500
2000
70
V/°C
nC
nC
nC
µC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V