FQB9N50CFTM Fairchild Semiconductor, FQB9N50CFTM Datasheet - Page 3

• Manufacturer Part Number: FQB9N50CFTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQB9N50CFTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 173W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB9N50CFTMTR

FQB9N50CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
2000
1600
1200
10
10
10
800
400
-1
1
0
10
0
2.0
1.5
1.0
0.5
10
-1
Top :
Bottom : 4.5 V
-1
0
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
DS
V
, Drain-Source Voltage [V]
DS
10
, Drain-Source Voltage [V]
0
10
I
D
0
, Drain Current [A]
10
C
C
C
rss
iss
oss
V
GS
= 10V
15
C
C
C
iss
oss
rss
10
※
= C
= C
= C
1
1. 250µ s Pulse Test
2. T
Notes :
10
gs
gd
ds
C
+ C
※
1
+ C
= 25 ℃
V
Note : T
※
gd
gd
20
GS
1. V
2. f = 1 MHz
(C
Notes ;
= 20V
ds
GS
= shorted)
J
= 0 V
= 25 ℃
25
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
12
10
8
6
4
2
0
-1
1
0
0.2
0
10
10
10
-1
1
0
2
Variation vs. Source Current
and Temperatue
25
o
0.4
C
5
150 ℃
150
o
C
V
Q
4
SD
G
0.6
V
10
, Source-Drain voltage [V]
, Total Gate Charge [nC]
GS
, Gate-Source Voltage [V]
25 ℃
V
DS
V
DS
= 400V
V
= 250V
DS
-55
0.8
15
= 100V
o
6
C
1.0
20
※
※
1. V
2. 250µ s Pulse Test
Notes :
Note : I
※
GS
8
1. V
2. 250µ s Pulse Test
= 0V
Notes :
1.2
D
25
DS
www.fairchildsemi.com
= 9A
= 40V
1.4
30
10