SI5482DU-T1-E3 Vishay, SI5482DU-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI5482DU-T1-E3
• Description: MOSFET N-CH 30V 12A PPAK CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5482DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1610pF @ 15V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFET Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5482DU-T1-E3TR

RECOMMENDED MINIMUM PADS FOR PowerPAK
Document Number: 69948
Revision: 21-Jan-08
Return to Index
(0.008)
0.200
(0.009)
0.225
(0.026)
0.650
Recommended Minimum Pads
(0.074)
1.870
Dimensions in mm/(Inches)
®
ChipFET
(0.012)
0.300
(0.101)
2.575
®
Single
(0.014)
0.350
Application Note 826
(0.012)
0.305
(0.014)
0.350
(0.012)
0.300
(0.020)
(0.014)
0.500
0.350
Vishay Siliconix
(0.004)
(0.010)
0.100
0.250
www.vishay.com
9