SIA443DJ-T1-E3 Vishay

SIA443DJ-T1-E3

Manufacturer Part Number

SIA443DJ-T1-E3

Description

MOSFET P-CH 20V 9A SC70-6

Manufacturer

Vishay

Specifications of SIA443DJ-T1-E3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

45 mOhm @ 4.7A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 8V

Input Capacitance (ciss) @ Vds

750pF @ 10V

Power - Max

15W

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6

Configuration

Single Quad Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.045 Ohms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

6.7 A

Power Dissipation

3.3 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SIA443DJ-T1-E3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SIA443DJ-T1-E3

Manufacturer:

Vishay/Siliconix

Quantity:

135

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