FDPF52N20T Fairchild Semiconductor, FDPF52N20T Datasheet - Page 3

• Manufacturer Part Number: FDPF52N20T
• Description: MOSFET N-CH 200V 52A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF52N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP52N20 / FDPF52N20T Rev. A
Typical Performance Characteristics
10
Figure 5. Capacitance Characteristics
10
10
10
Figure 3. On-Resistance Variation vs.
6000
5000
4000
3000
2000
1000
Figure 1. On-Region Characteristics
-1
0.12
0.10
0.08
0.06
0.04
0.02
0.00
2
1
0
10
0
10
-1
Top :
Bottom : 5.5 V
0
-1
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
Drain Current and Gate Voltage
C
C
C
V
oss
rss
iss
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
50
10
I
10
D
0
, Drain Current [A]
0
V
G S
75
= 10V
100
C
C
C
V
iss
oss
rss
G S
= C
= C
= C
10
10
= 20V
* Note : T
* Notes :
1
gs
gd
1. 250
2. T
ds
1
+ C
+ C
C
125
gd
= 25
gd
* Note ;
µ
J
(C
s Pulse Test
1. V
2. f = 1 MHz
= 25
ds
°
C
= shorted)
GS
°
C
= 0 V
150
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
0
2
0.4
10
25
4
Variation vs. Source Current
°
and Temperature
C
150
0.6
150 ℃
V
V
°
Q
C
GS
SD
G
20
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
25 ℃
0.8
6
V
V
V
DS
DS
DS
= 40V
= 100V
= 160V
30
1.0
-55
°
C
8
1.2
40
* Notes :
* Notes :
1. V
2. 250
1.4
* Note : I
1. V
2. 250
GS
DS
10
µ
= 0V
µ
s Pulse Test
= 40V
s Pulse Test
50
D
= 52A
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1.6
1.8
12
60