FDP8443 Fairchild Semiconductor, FDP8443 Datasheet - Page 5

• Manufacturer Part Number: FDP8443
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8443

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 9310pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8443 Rev. A
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
1000
100
Figure 9. Drain to Source On-Resistance
0.1
160
120
10
80
40
1
80
60
40
20
0
Variation vs Gate to Source Voltage
2.0
1
0
Figure 7. Transfer Characteristics
3
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DD
LIMITED
BY PACKAGE
V
DS
= 5V
V
2.5
GS
4
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE
5
I
3.0
D
T
=
J
80A
= -55
SINGLE PULSE
T J = MAX RATED
T C = 25
T
T
T
J
J
6
J
= 175
μ
= 25
o
10
= 25
T
s
3.5
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
o
C
= 175
o
o
o
C
C
C
7
o
C
4.0
8
4.5
10us
10ms
100us
1ms
DC
(
9
V
μ
)
s
100
5.0
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
500
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
10
200
160
120
0.01
1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
40
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R ≠ 0
t
0
AV
AV
STARTING T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
V
0.1
DS
-40
V
AS
, DRAIN TO SOURCE VOLTAGE (V)
T
GS
J
1
)/(1.3*RATED BV
t
, JUNCTION TEMPERATURE
AV
V
= 5V
J
GS
AS
, TIME IN AVALANCHE (ms)
= 150
*R)/(1.3*RATED BV
0
= 10V
1
Capability
o
C
2
40
10
STARTING T
μ
DSS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
- V
80
3
DD
DSS
100
)
- V
120
www.fairchildsemi.com
J
DD
= 25
V
) +1]
V
I
(
GS
D
GS
1000
o
V
4
o
C
C
= 80A
GS
160
= 4.5V
= 10V
)
= 4V
μ
5000
s
200
5