FDC654P Fairchild Semiconductor, FDC654P Datasheet - Page 3

MOSFET P-CH 30V 3.6A SSOT-6

FDC654P

Manufacturer Part Number
FDC654P
Description
MOSFET P-CH 30V 3.6A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC654P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
298pF @ 15V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC654P

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC654P
Manufacturer:
FAIRCHILD
Quantity:
4 670
Part Number:
FDC654P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC654P
Quantity:
6 790
Company:
Part Number:
FDC654P
Quantity:
1 320
Part Number:
FDC654P NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC654P-NL
Manufacturer:
FAIRCHILD
Quantity:
2 000
Part Number:
FDC654P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC654P_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
15
12
10
9
6
3
0
8
6
4
2
0
Figure 3. On-Resistance Variation with
0
1.6
1.4
1.2
0.8
0.6
1
Figure 1. On-Region Characteristics.
1
V
-50
GS
Figure 5. Transfer Characteristics.
V
DS
= -10V
= -5.0V
V
I
D
GS
= -3.6A
-25
= -10V
1
V
-6.0V
-V
-V
DS
2
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0
J
-5.0V
, JUNCTION TEMPERATURE (
Temperature.
2
25
-4.5V
3
50
T
A
3
= -55
-4.0V
75
o
C
100
4
o
C)
-3.5V
4
125
o
C
125
25
-3.0V
o
C
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.3
0.2
0.1
0.001
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
10
2
1
2
1
0
0
Drain Current and Gate Voltage.
V
GS
T
A
= 0V
V
= 25
GS
Gate-to-Source Voltage.
0.2
-V
= -3.5V
o
C
-V
SD
3
GS
4
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
-4.0V
A
T
= 125
-I
0.4
A
D
= 125
, DRAIN CURRENT (A)
-4.5V
o
6
C
o
C
6
-5.0V
0.6
25
o
C
9
-6.0V
0.8
-55
8
o
C
-7.0V
12
FDC654P Rev E1(W)
I
1
D
= -1.8A
-10V
10
1.2
15

Related parts for FDC654P