FDD6680 Fairchild Semiconductor, FDD6680 Datasheet - Page 16

• Manufacturer Part Number: FDD6680
• Description: MOSFET N-CH 30V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1230pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

same safeguards for sole source products as multi-source products.
We thank you for your attention in this matter. Should you have any questions,
please do not hesitate to contact your Fairchild Semiconductor salesperson.
Sincerely,
Fairchild Semiconductor
c.c.: Celsa Gonzalez
Tom Hudson
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