FQD3N50CTF Fairchild Semiconductor, FQD3N50CTF Datasheet - Page 3

• Manufacturer Part Number: FQD3N50CTF
• Description: MOSFET N-CH 500V 2.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD3N50CTF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 365pF @ 25V
• Power - Max: 35W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQD3N50C / FQU3N50C Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
600
400
200
10
10
10
0
10
-1
1
0
10
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-1
-1
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
0
D
0
, Drain Current [A]
4
C
C
C
oss
rss
iss
V
GS
= 10V
6
C
C
C
iss
oss
rss
= C
= C
= C
10
10
gs
gd
Notes :
ds
1
1. 250
2. T
+ C
1
+ C
Note : T
V
C
gd
GS
gd
= 25
8
(C
µ
s Pulse Test
= 20V
Note ;
ds
1. V
2. f = 1 MHz
J
°
= 25
= shorted)
C
GS
°
= 0 V
C
10
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
12
10
10
10
10
10
10
8
6
4
2
0
-1
-1
0
1
0
0
0.2
2
Variation vs. Source Current
and Temperatue
0.4
150
25
150
4
°
V
C
°
V
Q
C
GS
V
°
V
V
SD
C
G
DS
DS
DS
, Total Gate Charge [nC]
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
= 250V
= 100V
= 400V
25
5
°
C
0.8
6
-55
°
C
1.0
Note
Notes :
1. V
2. 250
1. V
2. 250
Note : I
8
DS
GS
= 40V
µ
s Pulse Test
µ
= 0V
s Pulse Test
D
1.2
10
www.fairchildsemi.com
= 3A
1.4
10