SFH9240 Fairchild Semiconductor, SFH9240 Datasheet

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SFH9240

Manufacturer Part Number
SFH9240
Description
MOSFET P-CH 200V 11A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFH9240

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1585pF @ 25V
Power - Max
126W
Mounting Type
Through Hole
Package / Case
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SFH9240FS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFH9240
Quantity:
1 572
Part Number:
SFH9240-Z
Manufacturer:
FOXCONN
Quantity:
1 200
Part Number:
SFH9240/SFH9241
Manufacturer:
OSRAM
Quantity:
12 000
Advanced Power MOSFET
Thermal Resistance
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 A (Max.) @ V
! Lower R
Absolute Maximum Ratings
T
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
CS
JC
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 ” from case for 5-seconds
: 0.344
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
Case-to-Sink
C
=25
C
C
=25
=100
o
C)
DS
o
C)
o
C)
= -200V
O
O
O
O
O
1
2
1
1
3
0.24
Typ.
--
--
- 55 to +150
Value
-200
300
12.6
-7.7
+ _
807
-5.0
126
BV
R
I
-11
-44
-11
1.0
TO-3P
D
1
1.Gate 2. Drain 3. Source
30
2
DS(on)
3
= -11 A
DSS
SFH9240
Max.
1.0
40
--
= 0.5
= -200 V
Units
o
Units
W/
V/ns
C/W
mJ
mJ
o
W
V
A
A
V
A
C
o
Rev. A
C

Related parts for SFH9240

SFH9240 Summary of contents

Page 1

... Maximum Lead Temp. for Soldering T L Purposes, 1/8 ” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case Junction-to-Ambient JA = -200V DS Characteristic o = =100 = Characteristic Case-to-Sink SFH9240 BV = -200 V DSS R = 0.5 DS(on - TO- 1.Gate 2. Drain 3. Source Value Units -200 V -11 A -7.7 - 807 mJ -11 A 12.6 mJ -5.0 V/ns W 126 o 1 ...

Page 2

... SFH9240 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss rss gd C iss oss rss Drain-Source Voltage [ Fig 4. Source-Drain Diode Forward Voltage Fig 6. Gate Charge vs. Gate-Source Voltage ( SFH9240 Fig 2. Transfer Characteristics Gate-Source Voltage [ Source-Drain Voltage [ Total Gate Charge [nC ...

Page 4

... SFH9240 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [ D=0.5 0.2 0 0.05 0.02 0. Fig 8. On-Resistance vs. Temperature Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response @ Notes : Duty Factor, D single pulse - Square Wave Pulse Duration 1 P-CHANNEL ...

Page 5

... V DS Vary t to obtain I p required peak DUT -10V t p Fig 12. Gate Charge Test Circuit & Waveform V GS Same Type as DUT -10V V DS DUT Current Sampling ( Resistor 0.5 rated 10% V out DSS SFH9240 Charge off d(on) r d(off) 90 DSS ---- 2 -------------------- DSS DD Time ( (t) DS ...

Page 6

... SFH9240 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver ) DUT ) DUT ) + Driver Compliment of DUT (N-Channel) • dv/dt controlled by “R • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period Body Diode Reverse Current Body Diode Forward Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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