IRFS634B_FP001 Fairchild Semiconductor, IRFS634B_FP001 Datasheet - Page 5

• Manufacturer Part Number: IRFS634B_FP001
• Description: MOSFET N-CH 250V 8.1A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of IRFS634B_FP001

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4.05A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS634B
- 1
- 2
- 1
- 2
Figure 11-1. Transient Thermal Response Curve for IRF634B
0
1 0
0
1 0
- 5
- 5
D = 0 .5
D = 0 .5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 0 1
0 . 0 5
0 . 0 2
0 . 2
0 . 2
0 . 1
0 . 1
1 0
1 0
(Continued)
- 4
- 4
s in g le p u ls e
s in g le p u ls e
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※ N o te s :
1 0
1 0
※ N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
1 . Z
2 . D u ty F a c to r, D = t
3 . T
- 1
- 1
P
P
θ J C
J M
DM
DM
θ J C
J M
- T
(t) = 1 .6 9 ℃ /W M a x .
- T
(t) = 3 .2 9 ℃ /W M a x .
C
C
= P
= P
t
t
D M
1
1
D M
t
t
1 0
1 0
2
2
* Z
* Z
0
0
1
θ J C
/t
1
θ J C
/t
2
2
(t)
(t)
1 0
1 0
1
1
Rev. A, November 2001