SFM9014TF Fairchild Semiconductor, SFM9014TF Datasheet
SFM9014TF
Manufacturer Part Number
SFM9014TF
Description
MOSFET P-CH 60V 1.8A SOT-223
Manufacturer
Fairchild Semiconductor
Datasheet
1.SFM9014TF.pdf
(7 pages)
Specifications of SFM9014TF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 900mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Advanced Power MOSFET
*
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 A (Max.) @ V
! Lower R
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
V
V
E
E
, T
I
I
P
T
I
DM
AR
DSS
D
GS
AS
AR
L
D
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.362
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
*
A
=25
A
A
=25
=70
*
o
C)
DS
o
o
C)
C)
*
= -60V
O
O
O
O
O
2
1
1
1
3
Typ.
--
- 55 to +150
0.022
0.28
Value
300
-1.8
-1.1
110
-1.8
-5.5
-60
-14
2.8
BV
R
I
!"
1. Gate 2. Drain 3. Source
D
SOT-223
DS(on)
= -1.8 A
DSS
SFM9014
Max.
1
45
= 0.5
= -60 V
3
2
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
V
A
A
V
A
C
Rev. B
o
C
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SFM9014TF Summary of contents
Page 1
Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 A (Max Lower R : ...
Page 2
SFM9014 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
Page 3
P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : - 5.0 V Bottom : - ...
Page 4
SFM9014 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature ...
Page 5
P-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling (I Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out -10V Fig 14. Unclamped Inductive Switching ...
Page 6
SFM9014 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + V DS DUT -- I S Driver Compliment ...
Page 7
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