APT10M11B2VFRG Microsemi Power Products Group, APT10M11B2VFRG Datasheet - Page 4

• Manufacturer Part Number: APT10M11B2VFRG
• Description: MOSFET N-CH 100V 100A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M11B2VFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 450nC @ 10V
• Input Capacitance (ciss) @ Vds: 10300pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT's devices are covered by one or more of the following U.S.patents: 4,895,810
These dimensions are equal to the TO-247 without the mounting hole.
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
400
100
50
10
20
16
12
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
V
1
0
Dimensions in Millimeters and (Inches)
LIMITED BY R DS (ON)
DS
OPERATION HERE
T C =+25°C
T J =+150°C
SINGLE PULSE
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
Q
100
g
, TOTAL GATE CHARGE (nC)
D
[Cont.]
1.01 (.040)
1.40 (.055)
(.177) Max.
5.45 (.215) BSC
5
200
4.50
V DS =50V
2-Plcs.
10
V DS =20V
300
15.49 (.610)
16.26 (.640)
V DS =80V
400
50
500
100
5,256,583
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
100µS
1mS
10mS
100mS
DC
5,045,903
4,748,103
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
5,089,434
5,283,202
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
30,000
10,000
5,000
1,000
500
400
100
50
10
5
1
5,182,234
5,231,474
.01
V
V
0
DS
SD
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)
TO-264 (L) Package Outline
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
C iss
C oss
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
APT10M11 B2VFR - LVFR
0.4
5,019,522
5,434,095
.1
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
T J =+150°C
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
0.8
2.79 (.110)
3.18 (.125)
2-Plcs.
5,262,336
5,528,058
1
1.2
19.51 (.768)
20.50 (.807)
T J =+25°C
C iss
C oss
C rss
1.6
10
2.0
50
Gate
Collector
Emitter
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)