IXFK44N50 IXYS, IXFK44N50 Datasheet - Page 3

• Manufacturer Part Number: IXFK44N50
• Description: MOSFET N-CH 500V 44A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK44N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 44
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 8400
• Qg, Typ, (nc): 270
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 520
• Rthjc, Max, (ºc/w): 0.24
• Package Style: TO-264
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification

C1 - 186
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
T
J
10 20 30 40 50 60 70 80 90 100
J
-25
= 25°C
= 25°C
48N50
44N50
5
Case Temperature
DS(on)
0
10
V
T
25
GS
I
vs. Drain Current
C
D
V
- Degrees C
= 10V
15
- Amperes
DS
V
50
- Volts
GS
= 10V
20
75
V
GS
7V
= 15V
25
100 125 150
6V
30
5V
35
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
80
70
60
50
40
30
20
10
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
0
Fig. 6 Temperature Dependence of
1
-25
-25
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
IXFN / IXFK 44N50
IXFN / IXFK 48N50
© 2000 IXYS All rights reserved
50
50
- Volts
5
I
D
= 24A
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10