IRFR4105 International Rectifier, IRFR4105 Datasheet - Page 2

• Manufacturer Part Number: IRFR4105
• Description: MOSFET N-CH 55V 27A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR4105

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR4105

Electrical Characteristics @ T
IRFR/U4105
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
L
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
D
SM
S
rr
on
V
fs
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
g
gs
gd
SD
2
V
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
I
max. junction temperature. ( See fig. 11 )
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
= 25 , I
= 25V, starting T
175°C
16A, di/dt
/ T
J
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 16A. (See Figure 12)
420A/µs, V
J
= 25°C, L = 410µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
This is applied for I-PAK, Ls of D-PAK is measured between lead and
Uses IRFZ34N data and test conditions
Calculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A
center of die contact
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
6.5
55
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.052 –––
Typ. Max. Units
–––
––– 0.045
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
700
240
100
7.0
7.5
4.5
–––
–––
–––
130
49
31
40
57
300µs; duty cycle
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
6.8
27
200
–––
100
25
34
14
1.6
86
V/°C
µA
nA
nC
nH
pF
ns
nC
V
V
S
ns
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
MOSFET symbol
integral reverse
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
J
J
2%
= 16A
= 16A
= 25°C, I
= 25°C, I
= 18
= 1.8
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 0V
GS
Conditions
, I
D
See Fig. 10
D
S
F
D
D
= 250µA
Conditions
GS
GS
= 16A
= 16A, V
= 250µA
= 16A
= 16A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V
G
G
S
+L
D
D
S
)
S
D