IRF3315 International Rectifier, IRF3315 Datasheet - Page 4

• Manufacturer Part Number: IRF3315
• Description: MOSFET N-CH 150V 27A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3315

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 136W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3315

IRF3315
4
3000
2500
2000
1500
1000
100
500
0.1
10
1
0
0.3
Fig 7. Typical Source-Drain Diode
1
T = 175 C
Fig 5. Typical Capacitance Vs.
J
V
V
SD
DS
°
0.6
Drain-to-Source Voltage
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
Forward Voltage
C
GS
iss
rss
oss
C
C
oss
rss
iss
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
J
0.9
+ C
+ C
10
f = 1MHz
INPUT NEW DATA
gd ,
gd
°
C
ds
1.2
V
SHORTED
GS
APPROVED
= 0 V
1.5
100
1000
100
20
16
12
10
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
1
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
12
OPERATION IN THIS AREA LIMITED
V
A
20
DS
Q , Total Gate Charge (nC)
°
Gate-to-Source Voltage
°
G
, Drain-to-Source Voltage (V)
V
V
V
10
DS
DS
DS
40
= 120V
= 75V
= 30V
BY R
INPUT NEW DATA
DS(on)
FOR TEST CIRCUIT
60
SEE FIGURE
100
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10us
100us
1ms
10ms
80
13
1000
100