IRL3303 International Rectifier, IRL3303 Datasheet - Page 2

• Manufacturer Part Number: IRL3303
• Description: MOSFET N-CH 30V 38A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3303

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3303

IRL3303
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
I
I
d(on)
r
d(off)
f
SM
S
rr
on
DSS
GSS
V
fs
S
D
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
V
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Internal Drain Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
= 20A. (See Figure 12)
J
= 25°C, L = 470µH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
SD
Min. Typ. Max. Units
30
12
–––
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
20A, di/dt
0.035 –––
–––
–––
––– 0.026
––– 0.040
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
200
4.5
7.5
870
340
170
–––
–––
180
7.4
14
36
72
–––
–––
140
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
110
280
300µs; duty cycle
8.8
1.3
25
26
15
38
140A/µs, V
V/°C
nA
nC
nH
µA
ns
pF
nC
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
DD
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 20A
= 20A
= 25°C, I
= 25°C, I
= 6.5
= 0.7
= 0V, I
= 10V, I
= 4.5V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 16V
= -16V
= 24V
= 4.5V, See Fig. 6 and 13
= 0V
= 25V
= 15V
V
2%.
(BR)DSS
GS
, I
D
See Fig. 10
V
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
GS
Conditions
= 20A
= 20A, V
= 250µA
= 20A
,
= 20A
= 17A
= 4.5V
= 0V
= 0V, T
D
= 1mA
GS
J
= 150°C
= 0V
S
+L
D
G
)
G
D
S
S
D