IRF3315S International Rectifier, IRF3315S Datasheet
IRF3315S
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IRF3315S Summary of contents
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... Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
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... IRF3315S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... V 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics ° 100 ° 175 50V IRF3315S/L 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 20µs PULSE WIDTH T = 175 0 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics 3 ...
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... IRF3315S/L 3000 iss rss gd 2500 oss ds C iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 175 0.1 0.2 0.5 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage f = 1MHz C SHORTED ...
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... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit 125 150 175 ° Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRF3315S D.U. 10V Pulse Width µs Duty Factor V DS ...
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... IRF3315S 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1000 15 V 800 600 + - 400 200 TOP BOTTOM 100 125 Starting T , Junction Temperature ( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D ...
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... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF3315S =10V ...
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... IRF3315S Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 5.08 (.200 ) & 14.5M , 1982 LLIN & Part Marking Information 2 D Pak TIF 4.69 (.185) 4.20 (.165) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 IRF3315S/L ...
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... IRF3315S/L Tape & Reel Information 2 D Pak TIO 330.00 (14.173 - LIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...