IRFZ44NS International Rectifier, IRFZ44NS Datasheet - Page 7
IRFZ44NS
Manufacturer Part Number
IRFZ44NS
Description
MOSFET N-CH 55V 49A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFZ44NS.pdf
(11 pages)
Specifications of IRFZ44NS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1470pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFZ44NS
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Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
G
D.U.T
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
Ground Plane
di/dt
Low Stray Inductance
Low Leakage Inductance
Current Transformer
IRFZ44NS/IRFZ44NL
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7