IRL5602S International Rectifier, IRL5602S Datasheet - Page 4

• Manufacturer Part Number: IRL5602S
• Description: MOSFET P-CH 20V 24A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL5602S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL5602S; Q803261

4
2800
2400
2000
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
-V
-V
DS
SD
Forward Voltage
V
C
C
C
0.4
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
°
C iss
C rss
C oss
=
=
=
=
0V,
C
C
C
gs
gd
ds
+ C
+ C
0.8
10
T = 25 C
f = 1MHz
gd ,
gd
J
C
ds
°
1.2
SHORTED
V
GS
= 0 V
100
1.6
1000
100
15
12
Fig 8. Maximum Safe Operating Area
10
9
6
3
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 175 C
-12A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
10
-V
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
20
BY R
30
10
DS(on)
V
V
DS
DS
40
FOR TEST CIRCUIT
SEE FIGURE
=-16V
=-10V
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100us
1ms
10ms
50
60
13
100
70