IRF3515S International Rectifier, IRF3515S Datasheet
IRF3515S
Specifications of IRF3515S
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IRF3515S Summary of contents
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... Telcom 48V input DC/DC Active Clamp Reset Forward Converter Notes through are on page 10 www.irf.com SMPS MOSFET HEXFET V DSS 150V 2 D Pak IRF3515S @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) PD- 91899B IRF3515S IRF3515L ® Power MOSFET R max I DS(on) D 0.045 41A TO-262 IRF3515L Max. Units 164 200 W 1.3 W/° ...
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... IRF3515S/L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
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... BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 50V 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRF3515S/L VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V 5.0V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 41A V = 10V ...
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... IRF3515S/L 100000 0V MHZ C iss = rss = oss = 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.2 0.6 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 16 12 Ciss 8 Coss 4 Crss 0 100 0 Fig 6. Typical Gate Charge Vs. ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3515S D.U. 10V µ d(off ...
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... IRF3515S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 1600 1200 ...
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... Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® HEXFET Power MOSFET IRF3515S =10V ...
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... IRF3515S Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. TRO L LIN ATSINK & SIO Pak Part Marking Information TIO (. (.16 5) 1 ...
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... TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRF3515S/L 9 ...
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... IRF3515S Pak Tape & Reel Information IRE C TIO IRE TES : EIA-418 LLING SIO N: M ILLIM ETER . 3. DIM ENS ION M EASUR INC LUD ES F LANG E DIST ORT EDG E. Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting T = 25° 2.2mH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...