IRF7807D1 International Rectifier, IRF7807D1 Datasheet - Page 2
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807D1
Manufacturer Part Number
IRF7807D1
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7807D1.pdf
(8 pages)
Specifications of IRF7807D1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF7807D1
Electrical Characteristics
*
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage* V
Drain-Source Leakage
Current*
Gate-Source Leakage
Current*
Total Gate Charge
Synch FET*
Total Gate Charge
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Q
Output Charge*
Gate Resistance
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Control FET*
2
gs2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
+ Q
gd
)
300 µs; duty cycle
R
I
Q
V
I
Q
Q
Q
Q
Q
Q
R
DSS
GSS
(BR)DSS
GS
DS
gsync
gcont
gs1
gs2
gd
SW
oss
g
2%.
(th)
(on)
V
Qrr
trr
t
on
SD
Intrinsic turn-on time is negligible (turn-on is dominated by L
Min
Min
1.0
30
10.5
0.76
3.66
15.3
Typ
Typ
2.1
2.9
1.2
17
12
51
48
+/- 100
Max
18.4
Max
0.39
7.2
5.2
90
14
17
0.5
25
Units
Units
m
mA
nC
nA
V
V
nC
ns
A
V
T
T
T
di/dt = 100A/µs
V
V
V
V
V
V
T
V
V
V
V
V
V
j
j
j
= 25°C, I
= 125°C, I
= 25°C, I
j
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 125°C
<100mV,
= 16V,
= 0V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= +/-12V
= 5V, I
= 5V, I
= 16V, I
= 16V, V
Conditions
Conditions
GS
s
s
,I
= 1A, V
s
= 7.0A, V
D
D
D
D
= 1A, V
D
= 250µA
= 250µA
= 7A
= 7A
D
GS
GS
GS
www.irf.com
= 7A
= 7A
= 0V
= 0V,
= 0
GS
S
GS
+L
DS
=0V
=0V
D
= 16V
)