IRF7809 International Rectifier, IRF7809 Datasheet - Page 2
![MOSFET N-CH 30V 17.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7809
Manufacturer Part Number
IRF7809
Description
MOSFET N-CH 30V 17.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7809.pdf
(4 pages)
Specifications of IRF7809
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 5V
Input Capacitance (ciss) @ Vds
7300pF @ 16V
Power - Max
3.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7809A
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7809ATR
Manufacturer:
IR
Quantity:
4 000
Part Number:
IRF7809ATR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7809ATRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7809AV
Manufacturer:
IR
Quantity:
1 325
Part Number:
IRF7809AV
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7809AVPBF
Manufacturer:
IR
Quantity:
5 452
Company:
Part Number:
IRF7809AVTR
Manufacturer:
BCD
Quantity:
100 000
Part Number:
IRF7809AVTR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7809AVTRPBF
Manufacturer:
SANKEN
Quantity:
3 572
IRF7809/IRF7811
Electrical Characteristics
Source-Drain Rating & Characteristics
2
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage*
Drain-Source Leakage
Current*
Current*
Gate-Source Leakage
Current*
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance C
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
gs2
+ Q
gd
)*
Notes:
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Devices are 100% tested to these parameters.
V
BV
R
I
t
C
C
I
Q
Q
Q
Q
Q
t
t
V
Q
Q
Q
Q
R
t
DSS
d (on)
GSS
r
d (off)
f
GS(th)
DS
iss
oss
SD
sw
oss
G
rr
GS1
GS2
GD
rr(s)
G
G
rss
DSS
(on)
Min
1.0
Min
300 µs; duty cycle
30
–
–
–
IRF7809
oss
7300
66.7
59.6
12.2
18.4
Typ
900
350
Typ
1.5
14
25
17
10
39
19
94
87
–
6
4
±100
86.6
77.5
Max
Max
150
7.5
1.0
30
24
30
–
–
–
–
2%.
Min
Min
1.0
28
–
–
–
IRF7811
1800
900
Typ
Typ
2.7
1.3
4.5
5.8
1.9
19
17
26
10
19
60
82
74
–
9
5
8
±100
20.5
Max Units
Max Units
150
7.0
1.0
11
30
23
31
–
–
–
–
m
µA
nA
nC
pF
nC
ns
V
V
V
V
V
V
V
V
Tj = 100°C
V
V
V
V
V
V
V
Clamped Inductive Load
V
I
di/dt ~ 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
S
GS
GS
DS
DS
DS
GS
GS
GS
DS
DS
DD
GS
DS
DS
DS
= 15A , V
=5V, I
= V
= 24V, V
= 24V, V
= 5V, V
= 16V, I
= 16V, V
= 16V, I
= 16V, V
= 0V, I
= 4.5V, I
= ±12V
= 5V
= 16V, V
= 16V, V
GS
Conditions
Conditions
,I
D
D
D
=15A, V
DS
D
D
= 250µA
= 250µA
D
GS
GS
GS
GS
GS
GS
< 100mV
= 15A
= 15A
GS
www.irf.com
= 15A
= 0
= 0,
= 0
= 0
= 0V, I
= 0V, I
= 0V
DS
=16V
S
S
= 15A
= 15A