IRF7811A International Rectifier, IRF7811A Datasheet

MOSFET N-CH 28V 11.4A 8-SOIC

IRF7811A

Manufacturer Part Number
IRF7811A
Description
MOSFET N-CH 28V 11.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7811A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
28V
Current - Continuous Drain (id) @ 25° C
11.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 5V
Input Capacitance (ciss) @ Vds
1760pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7811A

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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
Description
These new devices employ advanced HEXFET
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
applications
GS
4.5V)
DS(on)
and high Cdv/dt immunity for
sw
& R
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
DS(on)
DS(on)
, gate charge
for reduced
®
Power
Symbol
T
J
R
R
V
V
, T
I
P
I
HEXFET
I
DM
I
SM
DS
GS
D
S
D
JA
JL
STG
IRF7809A/IRF7811A
IRF7809A/IRF7811A
®
IRF7809A
V
R
Q
Q
Q
Chipset for DC-DC Converters
14.5
14.2
DS
DS
G
100
sw
oss
30
2.5
50
SO-8
(on)
PROVISIONAL DATASHEET
–55 to 150
±12
2.5
2.4
Max.
50
25
IRF7809A
DEVICE RATINGS
8.5 m
22.5 nC
73 nC
30 nC
30V
IRF7811A
11.4
G
100
11.2
S
S
S
2.5
28
50
1
2
3
4
T o p V ie w
IRF7811A
12 m
23 nC
31 nC
7 nC
28V
PD - 93810
PD - 93811
Units
Units
°C/W
°C/W
8
7
6
5
°C
W
V
A
A
01/19/00
D
D
D
D
A
A
1

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IRF7811A Summary of contents

Page 1

... DC-DC converters that power the latest generation of microprocessors. Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including R and Cdv/dt-induced turn-on immunity. The IRF7809A offers ...

Page 2

... Charge (with Parallel Schottky) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q * Devices are 100% tested to these parameters. 2 IRF7809A IRF7811A Min Typ Max Min Typ Max Units 30 – – 28 – ...

Page 3

... SO-8 Package Outline Part Marking Information www.irf.com IRF7809A/IRF7811A 3 ...

Page 4

... IRF7809A/IRF7811A SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches . . ( & LIN -48 1 & -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel 3983 0086 IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630 IR TAIWAN : 16F, Suite B, 319, Sec ...

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