IRFP9140N International Rectifier, IRFP9140N Datasheet - Page 2

• Manufacturer Part Number: IRFP9140N
• Description: MOSFET P-CH 100V 23A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP9140N

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 117 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 97nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP9140N

IRFP9140N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
L
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
Starting T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
I
T
SD
G
J
= 25 , I
175°C
-11A, di/dt
/ T
J
J
= 25°C, L = 7.1mH
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= -11A. (See Figure 12)
-470A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Uses IRF9540N data and test conditions
Pulse width
-100
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
5.3
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.11 –––
1300 –––
–––
–––
–––
––– -250
–––
––– -100
–––
–––
400
240
–––
–––
–––
150
830 1200
–––
––– 0.117
–––
5.0
13
15
67
51
51
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.3
220
–––
300µs; duty cycle
-25
-76
15
97
51
-23
V/°C
µA
nC
nH
µC
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
V
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -11A
= -11A
= 25°C, I
= 25°C, I
= 4.2
= 5.1
= V
= -50V, I
= -100V, V
= -80V, V
= -80V
= -50V
= -25V
= 0V, I
= -10V, I
= 20V
= -20V
= -10V, See Fig. 6 and 13
= 0V
2%.
GS
, I
D
See Fig. 10
S
F
D
Conditions
= -250µA
D
D
Conditions
= -11A
= -13A, V
GS
= -250µA
= 11A
= -13A
GS
= 0V, T
= 0V
D
= -1mA
G
GS
J
= 150°C
= 0V
G
S
+L
D
S
D
S
D
)