IRL1004S International Rectifier, IRL1004S Datasheet - Page 3

• Manufacturer Part Number: IRL1004S
• Description: MOSFET N-CH 40V 130A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1004S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5330pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL1004S

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10000
1000
1000
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
2.0
0.1
TOP
BOTTOM
3.0
V
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
GS
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
4.0
1
°
5.0
2.7V
6.0
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
DS
T = 175 C
J
10
= 50V
7.0
°
°
8.0
9.0
100
1000
2.5
2.0
1.5
1.0
0.5
0.0
100
Fig 2. Typical Output Characteristics
10
1
-60 -40 -20 0
0.1
Fig 4. Normalized On-Resistance
I =
D
TOP
BOTTOM
130A
V
IRL1004S/1004L
DS
T , Junction Temperature ( C)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
2.7V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100