IRL3302S International Rectifier, IRL3302S Datasheet - Page 4

• Manufacturer Part Number: IRL3302S
• Description: MOSFET N-CH 20V 39A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3302S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3302S

IRL3302S
2400
2000
1600
1200
1000
800
400
100
10
0
1
Fig 5. Typical Capacitance Vs.
0.5
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
V
V
SD
DS
°
Forward Voltage
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
1.0
C
C
C
J
=
=
=
=
oss
rss
iss
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
10
f = 1MHz
gd ,
gd
1.5
C
ds
V
SHORTED
GS
= 0 V
2.0
100
1000
100
10
15
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
23A
Gate-to-Source Voltage
V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
20
BY R
10
V
DS(on)
DS
30
= 16V
10us
100us
1ms
10ms
40
100
50