IRFL4105 International Rectifier, IRFL4105 Datasheet
IRFL4105
Specifications of IRFL4105
Available stocks
Related parts for IRFL4105
IRFL4105 Summary of contents
Page 1
... When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com HEXFET 10V 10V 10V 150 Typ PD- 91381A IRFL4105 ® Power MOSFET V = 55V DSS R = 0.045 DS(on 3. -22 3 Max. Units 5.2 3 ...
Page 2
... IRFL4105 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
Page 3
... G ate-to -So urce Voltag e ( Fig 3. Typical Transfer Characteristics www.irf.com TOP BOTTOM 4. 0 Fig 2. Typical Output Characteristics °C J 1.0 0 0.0 A 6.0 6.5 7.0 -60 Fig 4. Normalized On-Resistance IRFL4105 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4 .5V 20 µ ° rain-to-S ource V oltage ( 150 3 -40 - ...
Page 4
... IRFL4105 iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage Fig 6. Typical Gate Charge Vs ing lse 0.1 1.2 1.4 1.6 0.1 Fig 8. Maximum Safe Operating Area = 3 ...
Page 5
... Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 0 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit d(on) Fig 10b. Switching Time Waveforms 0 lse tio n ( IRFL4105 D.U. µ d(off ...
Page 6
... IRFL4105 . Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms RIV tarting unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy . TTO M 3 Vs. Drain Current www.irf.com ...
Page 7
... Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple for Logic Level Devices Fig 13. For N-Channel HEXFETS IRFL4105 + + P.W. Period V =10V * ...
Page 8
... IRFL4105 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 TIO www.irf.com ...
Page 9
... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com (. (. (. (. (. (. (. (. (. (. .40 (. . CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. 1/99 IRFL4105 (. (. (. (. (. (. (. (. 0. (. ...