IRLML2803TR International Rectifier, IRLML2803TR Datasheet - Page 4

• Manufacturer Part Number: IRLML2803TR
• Description: MOSFET N-CH 30V 1.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2803TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 910mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 85pF @ 25V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2803TR; IRLML2803; IRLML2803; IRLML2803CT

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0.1
10
160
140
120
100
1
80
60
40
20
0.4
0
1
C
C
C
V
V
iss
oss
rss
SD
0.6
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 150°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
J
gd
gd
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
1.4
100
A
A
100
0.1
20
16
12
10
8
4
0
1
0.0
1
I
T
T
Single Pulse
D
A
J
= 0.91A
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
V
1.0
DS
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
2.0
BY R
V
V
10
DS(on)
DS
DS
= 24V
= 15V
FOR TEST CIRCUIT
3.0
SEE FIGURE 9
10µs
100µs
1ms
10ms
4.0
4
100
5.0
A
A