IRLML6401TR International Rectifier, IRLML6401TR Datasheet - Page 5

• Manufacturer Part Number: IRLML6401TR
• Description: MOSFET P-CH 12V 4.3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6401TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML6401TR; IRLML6401; IRLML6401; IRLML6401CT

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1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
80
60
40
20
0
Fig 10. Maximum Avalanche Energy
25
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
100
1
DM
+ T
TOP
BOTTOM
A
t
1
t
125
2
-1.9A
-3.4A
-4.3A
°
I D
5
150
10