IRF1404S International Rectifier, IRF1404S Datasheet
IRF1404S
Specifications of IRF1404S
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IRF1404S Summary of contents
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... HEXFET Pak IRF1404S Max. @ 10V 162 GS @ 10V 115 GS -55 to +175 -55 to +175 300 (1.6mm from case ) Typ. ––– * ––– PD -93853C IRF1404S IRF1404L ® Power MOSFET V = 40V DSS R = 0.004 DS(on 162A D TO-262 IRF1404L Units A 650 3.8 W 200 W 1.3 W/° ...
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... IRF1404S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 ° 175 C 2.0 J 1.5 1.0 0.5 = 25V 0.0 -60 -40 -20 0 8.0 9.0 Fig 4. Normalized On-Resistance IRF1404S/L VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 159A ...
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... IRF1404S/L 12000 1MHz iss rss gd 10000 oss ds gd 8000 C iss 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 ° 0.4 0.8 1.2 1.6 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1404S D.U. µ d(off ...
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... IRF1404S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 1200 1000 ...
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... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® HEXFET Power MOSFETs IRF1404S =10V ...
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... IRF1404S Pak Package Outline 2 D Pak Part Marking Information 8 www.irf.com ...
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... TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRF1404S/L 9 ...
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... IRF1404S Pak Tape & Reel Information TIO .00 (1 4.1 73 IA- 418 . LIN ILL DIM WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. . . . . 1 1 3.50 (.5 32) 2 7.40 (1. 2.80 (.5 04) 2 3.90 (.941 ) 26 .40 (1. .40 (. Data and specifications subject to change without notice. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...