IRFU18N15D International Rectifier, IRFU18N15D Datasheet - Page 5
![MOSFET N-CH 150V 18A I-PAK](/photos/5/49/54916/21-i-pak_sml.jpg)
IRFU18N15D
Manufacturer Part Number
IRFU18N15D
Description
MOSFET N-CH 150V 18A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15D.pdf
(11 pages)
Specifications of IRFU18N15D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU18N15D
www.irf.com
0.01
0.1
20
16
12
10
0.00001
8
4
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
IRFR18N15D/IRFU18N15D
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D =
2. Peak T = P
G
Notes:
V
V
GS
GS
t
r
V
J
DS
0.01
µs
DM
x Z
t / t
1
thJC
D.U.T.
P
2
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
0.1