IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 5
![MOSFET N-CH 20V 2.4A MICRO-8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7521D1
Manufacturer Part Number
IRF7521D1
Description
MOSFET N-CH 20V 2.4A MICRO-8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7521D1.pdf
(8 pages)
Specifications of IRF7521D1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7521D1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1.0
0.8
0.6
0.4
0.2
0.0
1
0.0
D = 0.50
0.20
0.10
0.05
0.02
0.01
1.0
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
2.0
0.0001
I , D rain C urrent (A)
D
SINGLE PULSE
Current
3.0
V
GS
4.0
= 2.5V
0.001
Power Mosfet Characteristics
5.0
V
V
t , Rectangular Pulse Duration (sec)
1
GS
6.0
= 5.0V
= 4.0V
0.01
7.0
A
Fig 11. Typical On-Resistance Vs. Gate
0 . 1 2
0 . 1 0
0 . 0 8
0 . 0 6
0 . 0 4
0.1
0.0
V
G S
1. Duty factor D = t / t
2. Peak T = P
Notes:
2.0
, Gate-to-Source Voltage (V)
1
J
Voltage
DM
x Z
4.0
1
thJC
I
P
2
D
IRF7521D1
DM
= 1.7A
+ T
10
C
t
1
6.0
t
2
5
100
8.0
A