IRF7457 International Rectifier, IRF7457 Datasheet - Page 4

• Manufacturer Part Number: IRF7457
• Description: MOSFET N-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7457

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7457

IRF7457
4
5000
4000
3000
2000
1000
1000
0
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
1
Fig 7. Typical Source-Drain Diode
0.2
Drain-to-Source Voltage
T = 150 C
J
V
DS
V
SD
V
C
C
C
Forward Voltage
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.8
°
,Source-to-Drain Voltage (V)
=
=
=
=
C
C
C
0V,
C
C
C
iss
oss
T = 25 C
rss
gs
gd
ds
J
+ C
+ C
10
1.4
°
f = 1MHz
gd ,
gd
C
ds
2.0
SHORTED
V
GS
= 0 V
100
2.6
1000
100
10
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
12A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
10
DS
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
DS
= 10V
40
10
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10us
100us
1ms
10ms
50
100
60